onsemi-FCMT125N65S3 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:	49 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1920 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	181W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-PQFN (8x8)
Package / Case:	4-PowerTSFN

onsemi FCMT125N65S3