FCHD040N65S3-F155
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onsemi FCHD040N65S3-F155

Manufacturer No:
FCHD040N65S3-F155
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FCHD040N65S3-F155 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 65A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:136 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4740 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):417W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number FCHD040N65S3-F155 FCH040N65S3-F155  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V 40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.7mA 4.5V @ 6.5mA
Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V 136 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4740 pF @ 400 V 4740 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 417W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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