FCH165N60E
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onsemi FCH165N60E

Manufacturer No:
FCH165N60E
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FCH165N60E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 23A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2434 pF @ 380 V
FET Feature:- 
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number FCH165N60E FCP165N60E   FCH125N60E  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Last Time Buy
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 600 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) - 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 11.5A, 10V - 125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA - 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V - 95 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2434 pF @ 380 V - 2990 pF @ 380 V
FET Feature - - -
Power Dissipation (Max) 227W (Tc) - 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole - Through Hole
Supplier Device Package TO-247-3 - TO-247-3
Package / Case TO-247-3 - TO-247-3

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