FCH125N60E
  • Share:

onsemi FCH125N60E

Manufacturer No:
FCH125N60E
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
FCH125N60E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 29A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2990 pF @ 380 V
FET Feature:- 
Power Dissipation (Max):278W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$3.00
178

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCH125N60E FCH165N60E  
Manufacturer onsemi onsemi
Product Status Last Time Buy Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 14.5A, 10V 165mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2990 pF @ 380 V 2434 pF @ 380 V
FET Feature - -
Power Dissipation (Max) 278W (Tc) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

SFP9540
SFP9540
Fairchild Semiconductor
MOSFET P-CH 100V 17A TO220-3
IXFH46N65X3
IXFH46N65X3
IXYS
MOSFET 46A 650V X3 TO247
IPW65R041CFDFKSA1
IPW65R041CFDFKSA1
Infineon Technologies
MOSFET N-CH 650V 68.5A TO247-3
SI4848ADY-T1-GE3
SI4848ADY-T1-GE3
Vishay Siliconix
MOSFET N-CH 150V 5.5A 8SOIC
SSM6J414TU,LF
SSM6J414TU,LF
Toshiba Semiconductor and Storage
MOSFET P CH 20V 6A UF6
TK31N60X,S1F
TK31N60X,S1F
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 30.8A TO247
BSC019N04LSTATMA1
BSC019N04LSTATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
STH170N8F7-2
STH170N8F7-2
STMicroelectronics
MOSFET N-CH 80V 120A H2PAK-2
G15N06K
G15N06K
Goford Semiconductor
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
SPD06N60C3BTMA1
SPD06N60C3BTMA1
Infineon Technologies
MOSFET N-CH 650V 6.2A TO252-3
IRFR4105ZTRRPBF
IRFR4105ZTRRPBF
Infineon Technologies
MOSFET N-CH 55V 30A DPAK
HN4K03JUTE85LF
HN4K03JUTE85LF
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 100MA USV

Related Product By Brand

MSC2295-CT1G
MSC2295-CT1G
onsemi
RF TRANS NPN 20V 150MHZ SC59
2N6427
2N6427
onsemi
TRANS NPN DARL 40V 0.5A TO92
KSA1010OTU
KSA1010OTU
onsemi
TRANS PNP 100V 7A TO220-3
NVD3055L170T4G
NVD3055L170T4G
onsemi
N-CHANNEL POWER LOGIC LEVEL MOSF
HGTP10N120BN
HGTP10N120BN
onsemi
IGBT 1200V 35A 298W TO220AB
BSR58
BSR58
onsemi
JFET N-CH 40V 0.25W SOT-23
MC100LVEP111FA
MC100LVEP111FA
onsemi
IC CLK BUFF MUX 2:10 3GHZ 32LQFP
MC74HC74ADTR2
MC74HC74ADTR2
onsemi
IC FF D-TYPE DUAL 1BIT 14TSSOP
MC10EP51DTR2
MC10EP51DTR2
onsemi
IC FF D-TYPE SNGL 1BIT 8TSSOP
MC10E104FNG
MC10E104FNG
onsemi
IC GATE AND/NAND QD 2INP 28-PLCC
MC74LCX257M
MC74LCX257M
onsemi
IC MULTIPLEXER 4 X 2:1 16SOEIAJ
MC100ELT28DR2
MC100ELT28DR2
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC