FCH110N65F-F155
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onsemi FCH110N65F-F155

Manufacturer No:
FCH110N65F-F155
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FCH110N65F-F155 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 35A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4895 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number FCH110N65F-F155 FCH150N65F-F155   FCH190N65F-F155  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 24A (Tc) 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 17.5A, 10V 150mOhm @ 12A, 10V 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 3.5mA 5V @ 2.4mA 5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V 94 nC @ 10 V 78 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4895 pF @ 100 V 3737 pF @ 100 V 3225 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 357W (Tc) 298W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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