FCD900N60Z
  • Share:

onsemi FCD900N60Z

Manufacturer No:
FCD900N60Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FCD900N60Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 4.5A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.58
487

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCD900N60Z FCD600N60Z  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.3A, 10V 600mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 25 V 1120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 52W (Tc) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRFH7084TRPBF
IRFH7084TRPBF
Infineon Technologies
MOSFET N-CH 40V 100A 8PQFN
NTE67
NTE67
NTE Electronics, Inc
MOSFET N-CHANNEL 400V 4.5A TO220
IPZ40N04S5L2R8ATMA1
IPZ40N04S5L2R8ATMA1
Infineon Technologies
MOSFET N-CH 40V 40A 8TSDSON
BSZ130N03MSGATMA1
BSZ130N03MSGATMA1
Infineon Technologies
MOSFET N-CH 30V 9A/35A 8TSDSON
ZVNL110GTA
ZVNL110GTA
Diodes Incorporated
MOSFET N-CH 100V 600MA SOT223
IXFP4N85XM
IXFP4N85XM
IXYS
MOSFET N-CH 850V 3.5A TO220
SI7178DP-T1-GE3
SI7178DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 60A PPAK SO-8
DMN6040SFDEQ-7
DMN6040SFDEQ-7
Diodes Incorporated
MOSFET N-CH 60V 5.3A 6UDFN
IRFS11N50ATRL
IRFS11N50ATRL
Vishay Siliconix
MOSFET N-CH 500V 11A D2PAK
IRF3711STRL
IRF3711STRL
Infineon Technologies
MOSFET N-CH 20V 110A D2PAK
SI6465DQ-T1-E3
SI6465DQ-T1-E3
Vishay Siliconix
MOSFET P-CH 8V 8.8A 8TSSOP
BSC889N03MSGATMA1
BSC889N03MSGATMA1
Infineon Technologies
MOSFET N-CH 30V 12A 44A TDSON

Related Product By Brand

NHP620MFDT3G
NHP620MFDT3G
onsemi
DIODE GEN PURP 200V 3A SO-8FL
DSF10TE-BT
DSF10TE-BT
onsemi
DSF10 - RECTIFIER DIODE, 1A, 100
FQPF11P06
FQPF11P06
onsemi
MOSFET P-CH 60V 8.6A TO220F
N57L5125TBD00TG
N57L5125TBD00TG
onsemi
IC DGT POT 100KOHM 32TAP SOT23-6
MC74VHC1G132DTT1
MC74VHC1G132DTT1
onsemi
IC GATE NAND 1CH 2-INP 5-TSOP
DM74ALS14MX
DM74ALS14MX
onsemi
IC INV SCHMITT 6CH 1-IN 14SOIC
FPF2002
FPF2002
onsemi
IC PWR SWITCH P-CHAN 1:1 SC70-5
MAX810SN293D3T1G
MAX810SN293D3T1G
onsemi
IC SUPERVISOR 1 CHANNEL SOT23-3
TL594CDR2
TL594CDR2
onsemi
IC REG CTRLR BCK/PSH-PULL 16SOIC
NCP553SQ15T1G
NCP553SQ15T1G
onsemi
IC REG LINEAR 1.5V 80MA SC82AB
NCP105AMX100TCG
NCP105AMX100TCG
onsemi
IC REG LINEAR 1V 150MA 4XDFN
QSE259
QSE259
onsemi
IC PHOTOSENSOR SIDELOOKER