onsemi-EMH2801-TL-H - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	85mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	4 nC @ 4.5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	320 pF @ 10 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-EMH
Package / Case:	8-SMD, Flat Lead

onsemi EMH2801-TL-H