EFC6601R-A-TR
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onsemi EFC6601R-A-TR

Manufacturer No:
EFC6601R-A-TR
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
EFC6601R-A-TR Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH EFCP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:48nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:2W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFBGA, FCBGA
Supplier Device Package:EFCP2718-6CE-020
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Similar Products

Part Number EFC6601R-A-TR EFC6602R-A-TR  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate, 2.5V Drive Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) - -
Current - Continuous Drain (Id) @ 25°C - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V 55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds - -
Power - Max 2W 2W
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-XFBGA, FCBGA 6-XFBGA, FCBGA
Supplier Device Package EFCP2718-6CE-020 EFCP2718-6CE-020

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