onsemi-EFC4612R-TR - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	24 V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	45mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	7 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	1.6W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	EFCP1313-4CC-037
Package / Case:	4-XFBGA

onsemi EFC4612R-TR