onsemi-ECH8411-TL-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	16mOhm @ 4A, 4V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	21 nC @ 4 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	1740 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.4W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-ECH
Package / Case:	8-SMD, Flat Lead

onsemi ECH8411-TL-E