ECH8309-TL-H
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onsemi ECH8309-TL-H

Manufacturer No:
ECH8309-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
ECH8309-TL-H Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 9.5A 8ECH
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:16mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1780 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-ECH
Package / Case:8-SMD, Flat Lead
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Similar Products

Part Number ECH8309-TL-H ECH8308-TL-H  
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 16mOhm @ 4.5A, 4.5V 12.5mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V 26 nC @ 4.5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 1780 pF @ 6 V 2300 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 1.6W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-ECH 8-ECH
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead

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