onsemi-EC3H02BA-TL-H - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1dB @ 1GHz
Gain:	8.5dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 20mA, 5V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-XFDFN
Supplier Device Package:	ECSP1006-3

onsemi EC3H02BA-TL-H