onsemi-EC3A04B-3-TL-H - Transistors - JFETs Product Specifications and Latest Quotes

FET Type:	N-Channel
Voltage - Breakdown (V(BR)GSS):	-
Drain to Source Voltage (Vdss):	30 V
Current - Drain (Idss) @ Vds (Vgs=0):	1.2 mA @ 10 V
Current Drain (Id) - Max:	10 mA
Voltage - Cutoff (VGS off) @ Id:	180 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:	4pF @ 10V
Resistance - RDS(On):	200 Ohms
Power - Max:	100 mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-XFDFN
Supplier Device Package:	ECSP1006-3

onsemi EC3A04B-3-TL-H