onsemi-DTA114TXV3T1G - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	200 mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SC-89-3

onsemi DTA114TXV3T1G