onsemi-CPH6429-TL-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	220mOhm @ 1A, 4V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	4.2 nC @ 4 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	325 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	1.6W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-CPH
Package / Case:	SOT-23-6 Thin, TSOT-23-6

onsemi CPH6429-TL-E