onsemi-CPH5871-TL-W - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	52mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	4.7 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	430 pF @ 10 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	900mW (Ta)
Operating Temperature:	-55°C ~ 125°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-CPH
Package / Case:	SC-74A, SOT-753

onsemi CPH5871-TL-W