CPH3362-TL-W
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onsemi CPH3362-TL-W

Manufacturer No:
CPH3362-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
CPH3362-TL-W Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 700MA 3CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:1.7Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:3.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:142 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CPH
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Similar Products

Part Number CPH3362-TL-W CPH3462-TL-W   CPH3360-TL-W  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
FET Type P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 30 V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta) 1A (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 700mA, 10V 785mOhm @ 1A, 10V 303mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.7 nC @ 10 V 3.4 nC @ 10 V 2.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 142 pF @ 20 V 155 pF @ 20 V 82 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 1W (Ta) 1W (Ta) 900mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-CPH 3-CPH 3-CPH
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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