CPH3351-TL-W
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onsemi CPH3351-TL-W

Manufacturer No:
CPH3351-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
CPH3351-TL-W Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 1.8A 3CPH
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:262 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CPH
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number CPH3351-TL-W CPH3355-TL-W   CPH3356-TL-W   CPH3350-TL-W  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) 2.5A (Ta) 2.5A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V 156mOhm @ 1A, 10V 137mOhm @ 1A, 4.5V 83mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 1.4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 3.9 nC @ 10 V 3.3 nC @ 4.5 V 4.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 262 pF @ 20 V 172 pF @ 10 V 250 pF @ 10 V 375 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) 1W (Ta) 1W (Ta) 1W (Ta) 1W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-CPH 3-CPH 3-CPH 3-CPH
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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