onsemi-BVSS123LT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	20 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	225mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

onsemi BVSS123LT1G