onsemi-BUT11ATU-ON - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	5 A
Voltage - Collector Emitter Breakdown (Max):	450 V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Power - Max:	100 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

onsemi BUT11ATU-ON