onsemi-BUL642D2G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	440 V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 200mA, 2A
Current - Collector Cutoff (Max):	200µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	16 @ 500mA, 1V
Power - Max:	75 W
Frequency - Transition:	13MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

onsemi BUL642D2G