onsemi-BUH51 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BUH51	BUH51G	BUH50
Manufacturer	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	3 A	3 A	4 A
Voltage - Collector Emitter Breakdown (Max)	500 V	500 V	500 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 1A	500mV @ 200mA, 1A	1V @ 1A, 3A
Current - Collector Cutoff (Max)	100µA	100µA	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 1A, 1V	8 @ 1A, 1V	5 @ 2A, 5V
Power - Max	50 W	50 W	50 W
Frequency - Transition	23MHz	23MHz	4MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-220-3
Supplier Device Package	TO-126	TO-126	TO-220

onsemi BUH51

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	500 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 1A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 1A, 1V
Power - Max:	50 W
Frequency - Transition:	23MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126