onsemi-BU508AFTBTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	5 A
Voltage - Collector Emitter Breakdown (Max):	700 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 2A, 4.5A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	2.25 @ 4.5A, 5V
Power - Max:	60 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3 Full Pack
Supplier Device Package:	TO-3PF

onsemi BU508AFTBTU