BSS110
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onsemi BSS110

Manufacturer No:
BSS110
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
BSS110 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 50V 170MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:10Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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In Stock

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370

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Similar Products

Part Number BSS110 BSS100  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 10Ohm @ 170mA, 10V 6Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 2 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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