onsemi-BS108ZL1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2V, 2.8V
Rds On (Max) @ Id, Vgs:	8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id:	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	150 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	350mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92 (TO-226)
Package / Case:	TO-226-3, TO-92-3 Long Body (Formed Leads)

onsemi BS108ZL1G