BMS3003-1E
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onsemi BMS3003-1E

Manufacturer No:
BMS3003-1E
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
BMS3003-1E Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 78A TO220F-3SG
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:78A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 39A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:285 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13200 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3SG
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number BMS3003-1E BMS3004-1E  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 75 V
Current - Continuous Drain (Id) @ 25°C 78A (Ta) 68A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 39A, 10V 8.5mOhm @ 34A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 285 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 20 V 13400 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2W (Ta), 40W (Tc) 2W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F-3SG TO-220F-3SG
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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