onsemi-BF199_J35Z - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	25V
Frequency - Transition:	1.1GHz
Noise Figure (dB Typ @ f):	-
Gain:	-
Power - Max:	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	38 @ 7mA, 10V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

onsemi BF199_J35Z