onsemi-BDX53BG - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BDX53BG	BDX53CG	BDX54BG	BDX33BG	BDX53B
Manufacturer	onsemi	onsemi	onsemi	onsemi	STMicroelectronics
Product Status	Active	Active	Obsolete	Active	Active
Transistor Type	NPN - Darlington	NPN - Darlington	PNP - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	8 A	8 A	8 A	10 A	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V	100 V	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A	2V @ 12mA, 3A	2V @ 12mA, 3A	2.5V @ 6mA, 3A	2V @ 12mA, 3A
Current - Collector Cutoff (Max)	500µA	500µA	500µA	500µA	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V	750 @ 3A, 3V	750 @ 3A, 3V	750 @ 3A, 3V	750 @ 3A, 3V
Power - Max	65 W	65 W	65 W	70 W	60 W
Frequency - Transition	-	-	-	-	-
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220	TO-220

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	2V @ 12mA, 3A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 3A, 3V
Power - Max:	65 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

onsemi BDX53BG