onsemi-BD442S - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD442S	BD440S	BD442	BD442G
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Obsolete	Active
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	4 A	4 A	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V	60 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	800mV @ 200mA, 2A	800mV @ 200mA, 2A	800mV @ 300mA, 3A	800mV @ 300mA, 3A
Current - Collector Cutoff (Max)	100µA	100µA	100µA (ICBO)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 500mA, 1V	40 @ 500mA, 1V	40 @ 500mA, 1V	40 @ 500mA, 1V
Power - Max	36 W	36 W	36 W	36 W
Frequency - Transition	3MHz	3MHz	3MHz	3MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126-3	TO-126-3	TO-126	TO-126

onsemi BD442S

Transistor Type:	PNP
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 500mA, 1V
Power - Max:	36 W
Frequency - Transition:	3MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3