onsemi-BD442G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD442G	BD442S	BD440G	BD441G	BD442
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Obsolete	Obsolete	Active	Obsolete
Transistor Type	PNP	PNP	PNP	NPN	PNP
Current - Collector (Ic) (Max)	4 A	4 A	4 A	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	60 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	800mV @ 300mA, 3A	800mV @ 200mA, 2A	800mV @ 300mA, 3A	800mV @ 300mA, 3A	800mV @ 300mA, 3A
Current - Collector Cutoff (Max)	100µA (ICBO)	100µA	100µA (ICBO)	100µA (ICBO)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 500mA, 1V	40 @ 500mA, 1V	40 @ 500mA, 1V	40 @ 500mA, 1V	40 @ 500mA, 1V
Power - Max	36 W	36 W	36 W	36 W	36 W
Frequency - Transition	3MHz	3MHz	3MHz	3MHz	3MHz
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126-3	TO-126	TO-126	TO-126

onsemi BD442G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 300mA, 3A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 500mA, 1V
Power - Max:	36 W
Frequency - Transition:	3MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126