onsemi-BD435G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD435G	BD436G	BD439G	BD437G	BD435S	BD438G	BD435
Manufacturer	onsemi	onsemi	onsemi	onsemi	Fairchild Semiconductor	onsemi	onsemi
Product Status	Obsolete	Active	Active	Active	Active	Active	Obsolete
Transistor Type	NPN	-	NPN	NPN	NPN	PNP	NPN
Current - Collector (Ic) (Max)	4 A	-	4 A	4 A	4 A	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	32 V	-	60 V	45 V	32 V	45 V	32 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A	-	800mV @ 300mA, 3A	800mV @ 300mA, 3A	500mV @ 200mA, 2A	700mV @ 300mA, 3A	500mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100µA (ICBO)	-	100µA (ICBO)	100µA (ICBO)	100µA	100µA (ICBO)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	85 @ 500mA, 1V	-	40 @ 500mA, 1V	85 @ 500mA, 1V	40 @ 10mA, 5V	85 @ 500mA, 1V	85 @ 500mA, 1V
Power - Max	36 W	-	36 W	36 W	36 W	36 W	36 W
Frequency - Transition	3MHz	-	3MHz	3MHz	3MHz	3MHz	3MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	-	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	-	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	-	TO-126	TO-126	TO-126-3	TO-126	TO-126

onsemi BD435G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	32 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	85 @ 500mA, 1V
Power - Max:	36 W
Frequency - Transition:	3MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126