onsemi-BD241CG - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD241CG	BD242CG	BD243CG	BD244CG	BD241C
Manufacturer	onsemi	onsemi	onsemi	onsemi	STMicroelectronics
Product Status	Active	Active	Active	Active	Active
Transistor Type	NPN	PNP	NPN	PNP	NPN
Current - Collector (Ic) (Max)	3 A	3 A	6 A	6 A	3 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 600mA, 3A	1.2V @ 600mA, 3A	1.5V @ 1A, 6A	1.5V @ 1A, 6A	1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)	300µA	300µA	700µA	700µA	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 4V	25 @ 1A, 4V	15 @ 3A, 4V	15 @ 3A, 4V	10 @ 3A, 4V
Power - Max	40 W	40 W	65 W	65 W	40 W
Frequency - Transition	3MHz	3MHz	3MHz	3MHz	-
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220	TO-220

onsemi BD241CG

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 600mA, 3A
Current - Collector Cutoff (Max):	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 1A, 4V
Power - Max:	40 W
Frequency - Transition:	3MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220