onsemi-BD239TU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD239TU	BD239ATU	BD239BTU	BD239CTU
Manufacturer	onsemi	Fairchild Semiconductor	Fairchild Semiconductor	onsemi
Product Status	Obsolete	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	2 A	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	45 V	60 V	80 V	100 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 200mA, 1A	700mV @ 200mA, 1A	700mV @ 200mA, 1A	700mV @ 200mA, 1A
Current - Collector Cutoff (Max)	300µA	300µA	300µA	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V	15 @ 1A, 4V	15 @ 1A, 4V	15 @ 1A, 4V
Power - Max	30 W	30 W	30 W	30 W
Frequency - Transition	-	-	-	-
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 200mA, 1A
Current - Collector Cutoff (Max):	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 1A, 4V
Power - Max:	30 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

onsemi BD239TU