onsemi-BD238S - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD238S	BD238	BD238G
Manufacturer	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) (Max)	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	600mV @ 100mA, 1A	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100µA (ICBO)	100µA (ICBO)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 2V	25 @ 1A, 2V	40 @ 150mA, 2V
Power - Max	25 W	25 W	25 W
Frequency - Transition	3MHz	-	3MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126-3	SOT-32-3	TO-126

onsemi BD238S

Transistor Type:	PNP
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 1A, 2V
Power - Max:	25 W
Frequency - Transition:	3MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3