onsemi-BD237G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD237G	BD238G	BD137G	BD234G	BD237
Manufacturer	onsemi	onsemi	onsemi	onsemi	STMicroelectronics
Product Status	Active	Obsolete	Active	Active	Active
Transistor Type	NPN	PNP	NPN	PNP	NPN
Current - Collector (Ic) (Max)	2 A	2 A	1.5 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	60 V	45 V	80 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	600mV @ 100mA, 1A	500mV @ 50mA, 500mA	600mV @ 100mA, 1A	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100µA (ICBO)	100µA (ICBO)	100nA (ICBO)	100µA (ICBO)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 2V	40 @ 150mA, 2V	40 @ 150mA, 2V	25 @ 1A, 2V	25 @ 1A, 2V
Power - Max	25 W	25 W	1.25 W	25 W	25 W
Frequency - Transition	3MHz	3MHz	-	3MHz	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	TO-126	TO-126	SOT-32-3

onsemi BD237G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 1A, 2V
Power - Max:	25 W
Frequency - Transition:	3MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126