onsemi-BD180 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD180	BD180G	BD140
Manufacturer	onsemi	onsemi	STMicroelectronics
Product Status	Obsolete	Active	Active
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) (Max)	3 A	1 A	1.5 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	800mV @ 100mA, 1A	800mV @ 100mA, 1A	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	1mA (ICBO)	1mA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V	40 @ 150mA, 2V	40 @ 150mA, 2V
Power - Max	30 W	30 W	1.25 W
Frequency - Transition	3MHz	3MHz	-
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	SOT-32-3

onsemi BD180

Transistor Type:	PNP
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 100mA, 1A
Current - Collector Cutoff (Max):	1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 2V
Power - Max:	30 W
Frequency - Transition:	3MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126