onsemi-BD159STU-ON - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	350 V
Vce Saturation (Max) @ Ib, Ic:	-
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 50mA, 10V
Power - Max:	20 W
Frequency - Transition:	-
Operating Temperature:	50°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

onsemi BD159STU-ON