onsemi-BD13910S - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD13910S	BD13916S	BD13510S	BD13610S	BD13710S	BD13810S
Manufacturer	onsemi	onsemi	onsemi	Fairchild Semiconductor	onsemi	onsemi
Product Status	Active	Obsolete	Obsolete	Active	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN	PNP	NPN	PNP
Current - Collector (Ic) (Max)	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	45 V	45 V	60 V	60 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V	100 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V
Power - Max	1.25 W	1.25 W	1.25 W	1.25 W	1.25 W	1.25 W
Frequency - Transition	-	-	-	-	-	-
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126-3	TO-126-3	TO-126-3	TO-126-3	TO-126-3	TO-126-3

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	1.25 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

onsemi BD13910S