onsemi-BCX799_D26Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCX799_D26Z	BCX799_D27Z	BCX599_D26Z
Manufacturer	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	PNP	NPN
Current - Collector (Ic) (Max)	500 mA	500 mA	-
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V	-
Vce Saturation (Max) @ Ib, Ic	600mV @ 2.5mA, 100mA	600mV @ 2.5mA, 100mA	-
Current - Collector Cutoff (Max)	10nA	10nA	-
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 1V	80 @ 10mA, 1V	-
Power - Max	625 mW	625 mW	-
Frequency - Transition	-	-	-
Operating Temperature	-	-	-
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3

Transistor Type:	PNP
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 1V
Power - Max:	625 mW
Frequency - Transition:	-
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

onsemi BCX799_D26Z