onsemi-BC639_D75Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC639_D75Z	BC635_D75Z	BC637_D75Z	BC639_D74Z
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	45 V	60 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V	40 @ 150mA, 2V	40 @ 150mA, 2V	40 @ 150mA, 2V
Power - Max	1 W	1 W	1 W	1 W
Frequency - Transition	100MHz	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi BC639_D75Z

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 2V
Power - Max:	1 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3