onsemi-BC638G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC638G	BC639G	BC618G	BC637G	BC638
Manufacturer	onsemi	onsemi	onsemi	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	NPN	NPN - Darlington	NPN	PNP
Current - Collector (Ic) (Max)	500 mA	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	60 V	80 V	55 V	60 V	60 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	1.1V @ 200µA, 200mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	50nA	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V	40 @ 150mA, 2V	10000 @ 200mA, 5V	40 @ 150mA, 2V	40 @ 150mA, 2V
Power - Max	625 mW	625 mW	625 mW	625 mW	1 W
Frequency - Transition	150MHz	200MHz	150MHz	200MHz	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92 (TO-226)	TO-92 (TO-226)	TO-92 (TO-226)	TO-92 (TO-226)	TO-92-3

onsemi BC638G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 2V
Power - Max:	625 mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)