onsemi-BC517 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC517	BC547	BC517G	BC516
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN - Darlington	NPN	NPN - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	1 A	100 mA	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	30 V	45 V	30 V	30 V
Vce Saturation (Max) @ Ib, Ic	1V @ 100µA, 100mA	600mV @ 5mA, 100mA	1V @ 100µA, 100mA	1V @ 100µA, 100mA
Current - Collector Cutoff (Max)	500nA	15nA (ICBO)	500nA	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30000 @ 20mA, 2V	110 @ 2mA, 5V	30000 @ 20mA, 2V	30000 @ 20mA, 2V
Power - Max	625 mW	500 mW	625 mW	625 mW
Frequency - Transition	200MHz	300MHz	200MHz	200MHz
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92 (TO-226)	TO-92-3	TO-92 (TO-226)	TO-92-3

onsemi BC517

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 100µA, 100mA
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30000 @ 20mA, 2V
Power - Max:	625 mW
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)