onsemi-BC338_J35Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC338_J35Z	BC368_J35Z	BC328_J35Z	BC337_J35Z
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	PNP	NPN
Current - Collector (Ic) (Max)	800 mA	2 A	800 mA	800 mA
Voltage - Collector Emitter Breakdown (Max)	25 V	20 V	25 V	45 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA	500mV @ 100mA, 1A	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA	10µA (ICBO)	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V	85 @ 500mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	100MHz	45MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi BC338_J35Z

Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	25 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3