onsemi-BC33716TAR - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC33716TAR	BC33716TFR	BC32716TAR	BC33716TA
Manufacturer	onsemi	Fairchild Semiconductor	onsemi	onsemi
Product Status	Obsolete	Active	Obsolete	Active
Transistor Type	NPN	NPN	PNP	NPN
Current - Collector (Ic) (Max)	800 mA	800 mA	800 mA	800 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V	45 V	45 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	100MHz	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi BC33716TAR

Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3