onsemi-BC337-016 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC337-016	BC337-16	BC337-016G	BC327-016
Manufacturer	onsemi	Diotec Semiconductor	onsemi	onsemi
Product Status	Active	Active	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN	PNP
Current - Collector (Ic) (Max)	800 mA	800 mA	800 mA	800 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V	45 V	45 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	210MHz	100MHz	210MHz	260MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92 (TO-226)	TO-92	TO-92 (TO-226)	TO-92 (TO-226)

onsemi BC337-016

Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	625 mW
Frequency - Transition:	210MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)