onsemi-BC307_J35Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC307_J35Z	BC308_J35Z	BC327_J35Z	BC307B_J35Z
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	100 mA	100 mA	800 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	25 V	45 V	45 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 100mA	500mV @ 5mA, 100mA	700mV @ 50mA, 500mA	500mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA	15nA	100nA	15nA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 5V	120 @ 2mA, 5V	100 @ 100mA, 1V	180 @ 2mA, 5V
Power - Max	500 mW	500 mW	625 mW	500 mW
Frequency - Transition	130MHz	130MHz	100MHz	130MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi BC307_J35Z

Transistor Type:	PNP
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 2mA, 5V
Power - Max:	500 mW
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3