BC212_J35Z
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onsemi BC212_J35Z

Manufacturer No:
BC212_J35Z
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
BC212_J35Z Datasheet
ECAD Model:
-
Description:
TRANS PNP 50V 0.3A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):300 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2mA, 5V
Power - Max:625 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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In Stock

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417

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Similar Products

Part Number BC212_J35Z BC213_J35Z   BC214_J35Z   BC212B_J35Z   BC212L_J35Z  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP PNP PNP PNP PNP
Current - Collector (Ic) (Max) 300 mA 500 mA 500 mA 100 mA 300 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 30 V 30 V 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA, 5V 80 @ 2mA, 5V 140 @ 2mA, 5V 60 @ 2mA, 5V 60 @ 2mA, 5V
Power - Max 625 mW 625 mW 625 mW 350 mW 625 mW
Frequency - Transition - 200MHz 200MHz - 200MHz
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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