BBS3002-DL-1E
  • Share:

onsemi BBS3002-DL-1E

Manufacturer No:
BBS3002-DL-1E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
BBS3002-DL-1E Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 100A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:280 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13200 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
560

Please send RFQ , we will respond immediately.

Similar Products

Part Number BBS3002-DL-1E BBS3002-TL-1E  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 50A, 10V 5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V 280 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 20 V 13200 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 90W (Tc) 90W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRFL014NTRPBF
IRFL014NTRPBF
Infineon Technologies
MOSFET N-CH 55V 1.9A SOT223
HUF76409D3ST
HUF76409D3ST
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
SI1308EDL-T1-GE3
SI1308EDL-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 1.4A SOT323
PJS6405_S1_00001
PJS6405_S1_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
PJS6412_S1_00001
PJS6412_S1_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
NTMFS3D6N10MCLT1G
NTMFS3D6N10MCLT1G
onsemi
MOSFET N-CH 100V 19.5A/131A 5DFN
XP151A12A2MR
XP151A12A2MR
Torex Semiconductor Ltd
MOSFET N-CH 20V 1A SOT23
IRFP054
IRFP054
Vishay Siliconix
MOSFET N-CH 60V 70A TO247-3
NTD4970N-35G
NTD4970N-35G
onsemi
MOSFET N-CH 30V 8.5A/36A IPAK
ATP613-TL-H
ATP613-TL-H
onsemi
MOSFET N-CH 500V 5.5A ATPAK
BUK653R3-30C,127
BUK653R3-30C,127
Nexperia USA Inc.
MOSFET N-CH 30V 100A TO220AB
SI2372DS-T1-GE3
SI2372DS-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 4A/5.3A SOT23-3

Related Product By Brand

MBRS4201T3G
MBRS4201T3G
onsemi
DIODE SCHOTTKY 200V 4A SMC
2SD1012F-SPA-AC
2SD1012F-SPA-AC
onsemi
TRANS NPN 15V 0.7A 3SPA
NCV7351D1ER2G
NCV7351D1ER2G
onsemi
IC TRANSCEIVER HALF 1/1 8SOIC
74LCX00MTCX
74LCX00MTCX
onsemi
IC GATE NAND 4CH 2-INP 14TSSOP
LE2416RDXATDG
LE2416RDXATDG
onsemi
IC EEPROM 16KBIT I2C 1MHZ 6WLCSP
CAT24C512XI
CAT24C512XI
onsemi
IC EEPROM 512KBIT I2C 1MHZ 8SOIC
FAN4803CS1
FAN4803CS1
onsemi
IC PFC CTR AVER CURR 67KHZ 8SOIC
CAT1027LI-28-G
CAT1027LI-28-G
onsemi
IC SUPERVISOR 2 CHANNEL 8DIP
CAT1022ZD4I-25T3
CAT1022ZD4I-25T3
onsemi
IC SUPERVISOR MEMORY 8TDFN
NCV8715MX25TBG
NCV8715MX25TBG
onsemi
IC REG LINEAR 2.5V 50MA 6XDFN
NCP4682DSQ20T1G
NCP4682DSQ20T1G
onsemi
IC REG LINEAR 2V 150MA SC82AB
H11A1TM
H11A1TM
onsemi
OPTOISO 4.17KV TRANS W/BASE 6DIP