BBL4001-1E
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onsemi BBL4001-1E

Manufacturer No:
BBL4001-1E
Manufacturer:
onsemi
Package:
Tube
Datasheet:
BBL4001-1E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 74A TO220-3 FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:74A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:6.1mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3 Fullpack/TO-220F-3SG
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number BBL4001-1E BFL4001-1E  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 900 V
Current - Continuous Drain (Id) @ 25°C 74A (Ta) 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 37A, 10V 2.7Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V 44 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 20 V 850 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2W (Ta), 35W (Tc) 2W (Ta), 37W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 Fullpack/TO-220F-3SG TO-220-3 Fullpack/TO-220F-3SG
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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