onsemi-AFGY160T65SPD-B4 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	240 A
Current - Collector Pulsed (Icm):	480 A
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 160A
Power - Max:	882 W
Switching Energy:	12.4mJ (on), 5.7mJ (off)
Input Type:	Standard
Gate Charge:	245 nC
Td (on/off) @ 25°C:	53ns/98ns
Test Condition:	400V, 160A, 5Ohm, 15V
Reverse Recovery Time (trr):	132 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

onsemi AFGY160T65SPD-B4